Inequalities concerning the rate of growth of polynomials involving the polar derivative

This paper contains some results for algebraic polynomials in the complex plane involving the polar derivative that are inspired by some classical results of Bernstein. Obtained results yield the polar derivative analogues of some inequalities giving estimates for the growth of derivative of lacunary polynomials

Technology and Physics of Gate Recessed GaN/AlGaN FETs

Gallium Nitride (GaN), a wide band gap semiconductor, gained importance as Heterostructure Field Effect Transistors (HFET) in the early 90s. The fabrication of first HFET opened a door for tremendous research over GaN FETs. Currently GaAs/AlGaAs Modulation Doped FETs (MODFET) are utilized with limitations in high power applications. The reason for such limitation is poor physical and electrical properties concerning to GaAs. But now a day GaN with astonishing features compared to GaAs for high power, electrical and optoelectrical devices is a hot topic of research. The reason is based on its interesting physical properties like thermal stability, high breakdown voltage, chemical inertness and electrical properties as well as a property of wide band gap which plays an important role in blue Lasers and devices with low noise. GaN High Electron Mobility Transistors (HEMTs) and MODFETs are important electrical devices for high speed electronics. With the technological advent to control layer thickness in crystal growth by Metal Organic Vapor Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE), HFET emerged with new horizons. Structures with different layers are grown and characterized. Group III-Nitride devices are highly promising for numerous applications. For the optical/display applications, LASERs and light emitting diodes (in the visible and UV emission range) are used. On the other hand the electrical properties of gallium nitride are being utilized in order to fabricate the electrical devices that provide high performance e.g., field effect transistors working at high temperature, high frequencies or high power. Talking about field effect transistors grown over different substrates, gate recess technology is indeed important to have better control over the channel, higher modulation speed, etc. but, off course, it is a very difficult process step which needs high precision. Gate recessed HFETs are useful to reduce pinch off voltage and the gate leakage current of the device. In this thesis “Technology and Physics of gate recessed GaN/AlGaN HFETs” some geometrical aspects of recess and gates are investigated. Additionally some problems of the recess technology e.g. etching defects, the control of recess etching depths, misalignments of recess will be discussed. This thesis is divided into the following chapters; Chapter 2 is mainly concerned with some of the most important physical properties of III-nitrides. An overview of different types of FET based on GaN is given in Chapter 3. The theoretical Models which are used in this thesis are also illustrated. Chapter 4 introduces the technology which is used to fabricate recessed gate GaN/AlGaN HFETs. A recessed gate is formed by etching the surface down and then deposition of gate metals in this region. Theoretically it is a way to improve control over the channel [1.3]. Etching is done with Electron Cyclotron Resonance-Reactive Ion Etching (ECR-RIE). Optical and e-beam Lithography is also discussed here. Chapter 5 presents the results and discussion of realized recessed gate HFETs. Here basically characterization is done as a function of recess spacing (Lg), recess depth (trecess), and source drain spacing. Transconductance, drain currents and source resistance are important parameters in transistor characteristics. HFETs with recessed gate fabricated, show good channel control as the transconductance is as high as 220 mS/mm with 250 nm T-gate and a shift in the pinch off voltage could be seen. A detailed epitaxial layer structure and transistor layout is given in appendixes with process technology and instruments used

Effect of Organic and Inorganic Fertilizers on Brinjal Cultivars under the Agro-Climatic Conditions of Mansehra

The effect of organic and inorganic fertilizers on Brinjal cultivars under the agro-climatic conditions of Mansehra was studied at Agricultural Research Station Baffa Mansehra, during crop season 2011. The experiment was laid out in Randomized Complete Block Design (RCBD) with two factors having split plot arrangement. There were three treatments which includes control (No fertilizer), inorganic regime (NPK @ 100:50:50 kg ha-1) and organic regime (Farm yard manure + Poultry manure + Mashroom waste @ 25 t ha-1, 5 t ha-1 and 10 t ha-1 respectively) were assigned to main plot. Four brinjal cultivars i.e. Pusa Long, Long Black, Black Beauty and Purple Long were used as sub plot factors.  Both the growing regimes and cultivars significantly affected all the growth and yield parameters except the survival percentage of seedlings. Among the growing regimes the organic fertilizer significantly influenced most of growth and yield components of brinjal. However, minimum days to flowering (33.6), fruit set (46.6), fruit harvest (57.3) and the maximum fruit length (21.2 cm) and fruit diameter (7.0 cm) were recorded in plants grown under organic fertilizers.  The brinjal cultivars also significantly influenced most of the parameters. The cultivar Pusa Long significantly resulted in the maximum plant height (82.9 cm) and also took less number of days to flowering (37.8). While the maximum fruit length (20.8 cm), less number of days to fruit set (48.1) and days to harvest (58.6) were recorded for cultivar Purple Long. Regarding to interaction of growing regimes and cultivars, the organic regime and cultivar Pusa Long showed the best performance for most of the growth and yield characteristics of brinjal. It is concluded from the present findings that brinjal cultivar Pusa Long should be cultivated under organic regime to obtain the higher yield and maximum profitability at Mansehra, Abbottabad- Pakistan. Keywords: Brinjal, variety, organic, inorganic, fruit diameter

Effect of Sowing Dates on the Yield and Seed Production of Okra Cultivars in Mansehra

To monitor the effect of different sowing dates on the yield and seed production of okra cultivars, an experiment was conducted at Agricultural Research Station, Baffa Mansehra during 2014. Six cultivars of okra i.e. Irka, Sabz Pari, Pusa Green, Pusa Sawani, Sarhad Green and Green Star were sown on three different sowing dates with 15 days interval i.e. 15th March, 30th March and 14th April, 2014. Maximum number of pods plant-1 (32.12), pod length (11.12 cm), pod diameter (1.54 cm), pod weight (15.24 gm), plant height (184.28 cm), pod yield (16.24 t ha-1), seed yield (1601.92 kg ha-1) and 1000-seed weight (86.92 gm) were recorded in cultivars, sown on 30th March, 2014. Maximum number of pods plant-1 (32.75), pod length (11.57 cm), pod diameter (1.67 cm), pod weight (16.04 gm), plant height (187.17 cm), pod yield (17.50 t ha-1), seed yield (1735.00 kg ha-1) and 1000-seed weight (89.32 gm) were recorded in cultivar Sabz Pari. Sowing of okra cultivar Sabz Pari on 30th March is recommended for realizing maximum fresh pod and seed yields under the agro-climatic conditions of Mansehra District. Key words: okra, cultivar, sowing date, pod yield, seed weight

Effect of Various Levels of Nitrogen, Phosphorus and Potash on the Yield of French Bean

The experiment was conducted at the farm of Agricultural Research Station, Baffa (Mansehra) during August 2014 to monitor the effect of various levels of fertilizer treatments on plant height, number of branches plant-1, pod length, pod weight and pod yield of French bean variety (paulista). The experimental results revealed that that all the fertilizer treatments increased the plant height, number of branches plant-1, pod length, pod weight and pod yield of French bean significantly over control treatment. Maximum plant height (39.03 cm), number of branches plant-1(18.25), pod length (14.10 cm),  pod weight (5.37 gm) and pod yield (8.26 t ha-1) were recorded in the treatment receiving 120 kg N, 90 kg P2O5 and 90 kg K2O ha-1. The economics of fertilizers were also worked out on the basis of current market prices and it was found that use of fertilizer was profitable. The cost benefit ratio ranged between 4.90. to 6.05.

Recycling of Injection Equipment in Pakistan

The prevalence of hepatitis C virus (HCV) infection is high in the general population in Pakistan, ranging from 2% to 6%. Reuse of injection equipment in the absence of sterilization is common, particularly in healthcare facilities that serve low-income populations. Studies have identified unsafe injection practices as a major route of transmission of HCV in Pakistan. Changing the behavior of injection providers so that they would use new freshly opened disposable syringes would improve injection safety in Pakistan. However, frequent reports of recycling of injection equipment in the local media question the safety of apparently new syringes. Clinical laboratories are one of the major sources of production of used syringes. To evaluate the resale of used syringes, we followed the course of used syringes from their initial use to their final destinatio

Hematoma Enlargement Among Patients with Traumatic Brain Injury: Analysis of a Prospective Multicenter Clinical Trial

Observational studies suggest that hematomas continue to enlarge during hospitalization in patients with traumatic brain injury (TBI). There is limited data regarding factors associated with hematoma enlargement and on whether hematoma enlargement contributes directly to death and disability in patients with TBI. We analyzed data collected as part of the Resuscitation Outcomes Consortium Hypertonic Saline and TBI Study. Hematoma enlargement was ascertained and collected as a predefined safety endpoint. We evaluated the effect of hematoma enlargement on the risk of death and disability at 6 months based on the Extended Glasgow Outcome Scale (GOSE) (dichotomized as \u3e4 or ≤4) using stepwise logistic regression analysis. We adjusted for age (continuous variable), admission GCS score (dichotomized at \u3e5 and ≤5), and computed tomography (CT) scan classification (Marshall grades entered as a categorical variable). Of the 1200 patients with severe TBI analyzed, 238 (19.8%) patients were reported to have hematoma enlargement as an adverse event. The proportion of patients who reached favorable outcome at 6 months was significantly lower (defined by GOSE of \u3e4) among patients with hematoma enlargement (29.0% vs. 40.1%, p\u3c.0001). The proportion of patients who died within 6 months was significantly higher among patients with hematoma enlargement (31.9% vs. 20.7%, p\u3c.0001). After adjusting for age, admission GCS score, and initial injury score, the odds of favorable outcome was lower in patients with hematoma enlargement (odds ratio 0.7, 95% confidence interval [CI]; 0.5–0.97). Our results suggest that hematoma enlargement may be a direct contributor to death and disability in patients with TBI at 6 months. Future clinical trials must continue to evaluate new therapeutic interventions aimed at reducing hematoma enlargement with a favorable risk benefit ratio in patients with TBI